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BUK9107-55ATE
N-channel TrenchPLUS logic level FET
Rev. 02 -- 16 February 2009 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Allows responsive temperature monitoring due to integrated temperature sensor Q101 compliant Electrostatically robust due to integrated protection diodes Low conduction losses due to low on-state resistance
1.3 Applications
12 V and 24 V high power motor drives Automotive and general purpose power switching Electrical Power Assisted Steering (EPAS) Protected drive for lamps
1.4 Quick reference data
Table 1. VDS ID Ptot Tj RDSon Quick reference Conditions Tj 25 C; Tj 175 C VGS = 5 V; Tmb = 25 C; see Figure 2 and 3 Tmb = 25 C; see Figure 1 Min [1] -55 VGS = 4.5 V; ID = 50 A; Tj = 25 C VGS = 10 V; ID = 50 A; Tj = 25 C VGS = 5 V; ID = 50 A; Tj = 25 C; see Figure 7 and 8 SF(TSD) VF(TSD) temperature sense diode IF = 250 A; Tj > -55 C; Tj < 175 C temperature coefficient temperature sense diode IF = 250 A; Tj = 25 C forward voltage
[1] Current is limited by power dissipation chip rating.
Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance
Typ 6 5.2 5.8
Max 55 140 272 175 7.7 6.2 7
Unit V A W C m m m
Static characteristics -1.4 648
-1.54 -1.68 mV/K 658 668 mV
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 mb Pinning information Symbol G A D K S D Description gate anode drain cathode source mounting base; connected to drain
12 3 45
S K
mbl317
Simplified outline
mb
Graphic symbol
D A
G
SOT426 (D2PAK)
3. Ordering information
Table 3. Ordering information Type number Package Name Description BUK9107-55ATE D2PAK plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped)
Version SOT426
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
2 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
4. Limiting values
Table 4. Symbol VDS VGS ID Limiting values Parameter drain-source voltage gate-source voltage drain current Tmb = 25 C; VGS = 5 V; see Figure 2; see Figure 3 Tmb = 100 C; VGS = 5 V; see Figure 2 IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 1 continuous pulsed; tp = 5 ms; = 0.01 Conditions Tj 25 C; Tj 175 C [1] [2] [3] [3] Min -15 -100 -55 -55 Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C [2] [3] ISM Clamping EDS(CL)S non-repetitive drain-source ID = 75 A; VDS 55 V; VGS = 5 V; RGS = 50 ; clamping energy unclamped; Tj(init) = 25 C electrostatic discharge voltage
[1] [2] [3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Max 55 15 140 75 75 560 272 10 50 100 175 175 55 140 75 560 500 Unit V V A A A A W mA mA V C C V A A A mJ
Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj VDGS IS storage temperature junction temperature drain-gate voltage source current peak source current
Source-drain diode -
Electrostatic discharge Vesd HBM; C = 100 pF; R = 1.5 k; pins 1, 3, 5 6 kV
Voltage is limited by clamping. Current is limited by power dissipation chip rating. Continuous current is limited by package.
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
3 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
120 Pder (%) 80
03na19
150 ID (A) 125
03ne74
100
75 Capped at 75 A due to package
40
50
25
0 0 50 100 150 Tmb (C) 200
0 25 50 75 100 125 150 175 200 Tmb (oC)
Fig 2. Fig 1. Normalized total power dissipation as a function of mounting base temperature
Normalized continuous drain current as a function of mounting base temperature
103 ID (A)
03nf55
Limit RDSon = VDS/ID
tp = 10 s
102
100 s Capped at 75 A due to package 1 ms DC
10
10 ms 100 ms
1 1 10 VDS (V) 102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
4 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 50 0.55 Unit K/W K/W thermal resistance from mounted on printed-circuit board; junction to ambient minimum footprint thermal resistance from see Figure 4 junction to mounting base
1
03ne76
Z th(j-mb) (K/W)
10-1
= 0.5
0.2 0.1 0.05 0.02 Single Shot
P
=
tp T
10-2
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
5 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 9 IDSS V(BR)GSS IGSS RDSon drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 C VDS = 55 V; VGS = 0 V; Tj = 175 C gate-source breakdown IG = -1 mA; -55 C < Tj < 175 C voltage IG = 1 mA; -55 C < Tj < 175 C gate leakage current drain-source on-state resistance VDS = 0 V; VGS = 5 V; Tj = 25 C VDS = 0 V; VGS = -5 V; Tj = 25 C VGS = 5 V; ID = 50 A; Tj = 25 C; see Figure 7; see Figure 8 VGS = 5 V; ID = 50 A; Tj = 175 C; see Figure 7; see Figure 8 VGS = 4.5 V; ID = 50 A; Tj = 25 C VGS = 10 V; ID = 50 A; Tj = 25 C VF(TSD) SF(TSD) temperature sense diode forward voltage temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time VDS = 30 V; RL = 1.2 ; VGS = 5 V; RG(ext) = 10 ; Tj = 25 C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 12 IF = 250 A; Tj = 25 C IF = 250 A; Tj > -55 C; Tj < 175 C Min 55 50 1 0.5 12 12 648 -1.4 Typ 1.5 0.1 15 15 5 5 5.8 6 5.2 658 -1.54 Max 2 2.3 10 250 1000 1000 7 14 7.7 6.2 668 -1.68 Unit V V V V V A A V V nA nA m m m m mV mV/K
Static characteristics
VF(TSD)hys
IF > 125 A; IF < 250 A; Tj = 25 C
25
32
50
mV
Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf ID = 50 A; VDS = 44 V; VGS = 5 V; Tj = 25 C; see Figure 14 108 15 47 5836 958 595 51 202 341 207 nC nC nC pF pF pF ns ns ns ns
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
6 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
Table 6. Symbol LD LS
Characteristics ...continued Parameter internal drain inductance internal source inductance source-drain voltage reverse recovery time recovered charge Conditions from upper edge of drain mounting base to centre of die; Tj = 25 C from source lead to source bond pad; Tj = 25 C IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 17 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V; Tj = 25 C Min Typ 2.5 7.5 Max Unit nH nH
Source-drain diode VSD trr Qr 0.85 85 250 1.2 V ns nC
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
7 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
ID 400 (A) 350 300
03ne77
25 RDSon (m) 20
4
03ne79
V GS = 5 V 6 10
4.6 4.4 4.2
250 200 150 100 50 0 0 2 4 6 8 10 VDS (V)
3.8
3.6
15
3.4
3.2
10
3
2.8
5
2.6 2.4 2.2
0 2 4 6 8V 10 GS (V)
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 6.
Drain-source on-state resistance as a function of gate-source volatage; typical values
2
03ne89
16 RDSon (m) 14
03ne78
a
VGS = 3 V 3.6 3.2 3.4 3.8 4
1.5
12
1
10
0.5
8 5 10 6 0 50 100 150 200 250 300 ID (A)
0 -60
0
60
120
Tj (C)
180
Fig 7.
Drain-source on-state resistance as a function of drain current; typical values
Fig 8.
Normalized drain-source on-state resistance factor as a function of junction temperature
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
8 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
2.5 VGS(th) (V) 2
03na17
10-1 ID
(A) 10-2
03na18
max
typ
1.5
min
10-3
min
typ
max
1
10-4
0.5
10-5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5 3 VGS (V)
Fig 9.
Gate-source threshold voltage as a function of junction temperature
Fig 10. Sub-threshold drain current as a function of gate-source voltage
140 gfs (S) 120 100
03ne81
16000 C (pF) 14000 12000 10000
03ne86
80
8000
60 40 20 0 0 20 40 60 80 I (A) 100 D
6000 4000 2000 0 10-2 10-1 1 10 VDS (V)
Ciss
Coss Crss 102
Fig 11. Forward transconductance as a function of drain current; typical values
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
9 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
100 ID (A) 80
03ne80
5 VGS (V) 4 VDS = 14 V
03nf65
60
3
Tj = 175 C
40
2
VDS = 44 V
20
1
Tj = 25 C
0 0.0 1.0 2.0 VGS (V) 3.0
0 0 20 40 60 80 100 120 QG (nC)
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values
700 VF (mV) 600
03ne84
Fig 14. Gate-source voltage as a function of gate charge; typical values
03ne85
-1.70 SF (mV/K) -1.60 max
typ
500
-1.50
min 400 0 50 100 150 Tj (C) 200 -1.40 645
655
665 VF (mV)
675
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values
Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
10 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
100 IS (A) 80 Tj = 175 C 60
03ne88
40 Tj = 25 C 20
0 0.0 0.5 1.0 VSD (V) 1.5
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
11 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped) SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-03-09 06-03-16
Fig 18. Package outline SOT426 (D2PAK)
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
12 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
8. Revision history
Table 7. Revision history Release date 20090216 Data sheet status Product data sheet Change notice Supersedes BUK9107_9907_55ATE-01 Document ID BUK9107-55ATE_2 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK9107-55ATE separated from data sheet BUK9107_9907_55ATE-01. Product data sheet -
BUK9107_9907_55ATE-01 20020207 (9397 750 09138)
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
13 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK9107-55ATE_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 February 2009
14 of 15
NXP Semiconductors
BUK9107-55ATE
N-channel TrenchPLUS logic level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 -- 16 February 2009 Document identifier: BUK9107-55ATE_2

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